Large-scale Ni-doped ZnO nanowire arrays and electrical and optical properties.
نویسندگان
چکیده
Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors.
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ورودعنوان ژورنال:
- Journal of the American Chemical Society
دوره 127 47 شماره
صفحات -
تاریخ انتشار 2005